The ADG711, ADG712 and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage currents and high bandwidth.
They are designed to operate from a single +1.8 V to +5.5 V supply, making them ideal for use in battery powered instruments and with the new generation of DACs and ADCs from Analog Devices. Fast switching times and high bandwidth make the part suitable for video signal switching.
The ADG711, ADG712 and ADG713 contain four independent single-pole/single throw (SPST) switches. The ADG711 and ADG712 differ only in that the digital control logic is inverted.
The ADG711 switches are turned on with a logic low on the appropriate control input, while a logic high is required to turn on the switches of the ADG712. The ADG713 contains two switches whose digital control logic is similar to the ADG711, while the logic is inverted on the other two switches.
Each switch conducts equally well in both directions when ON. The ADG713 exhibits break-before-make switching action. The ADG711/ADG712/ADG713 are available in 16-lead TSSOP and 16-lead SOIC packages.
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .0.3 V to +6 V
Analog, Digital Inputs2 . . . . . . . . . . .0.3 V to VDD +0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . .100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . 40°C to +85°C
Storage Temperature Range . . . . . . . . .65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . .+150°C
TSSOP Package, Power Dissipation . . . . . . . . . . . . .430 mW
JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . 150°C/W
JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 27°C/W
SOIC Package, Power Dissipation . . . . . . . . . . . . . .520 mW
JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . 125°C/W
JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . .42°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 kV
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute max
Required Field 
